Art
J-GLOBAL ID：200902195362952074
Reference number：99A0245545
Proximity Effect Correction by Pattern Modified Stencil Mask in Large-Field Projection Electron Beam Lithography.
大フィールド描画電子ビームリソグラフィーにおけるパターン修正ステンシルマスクによる近接効果補正
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Author (5)：
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Material：
Volume：
37
Issue：
12B
Page：
6767-6773
Publication year：
Dec. 1998
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
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Manufacturing technology of solid-state devices
Reference (17)：
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1) H. C. Pheiffer: IEEE Trans. Electron Devices 26 (1979) 663.
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2) Y. Nakayama, S. Okazaki, N. Saitou and H. Wakabayashi: J. Vac. Sci. Technol. B8 (1990) 1836
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3) H. Yasuda, K. Sakamoto, A. Yamada and K. Kawashima: Jpn. J. Appl. Phys. 30 (1991) 3098.
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4) Y. Sakitani, H. Yoda, H. Todokoro, Y. Shibata, T. Yamazaki, K. Ohbitu, N. Saitou, S. Moriyama, S. Okazaki, G. Matsuoka, F. Murai and M. Okumura: J. Vac. Sci. Technol. B10 (1992) 2759
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5) K. Hattori, R. Yoshikawa, H. Wada, H. Kasukabe, T. Yamaguchi, S. Magoshi, A. Miyagaki, S. Yamasaki, T. Takigawa, M. Kanoh, S. Nishimura, H. Housai and S. Hashimoto: J. Vac. Sci. Technol. B11 (1993) 2346
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