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J-GLOBAL ID：200902195990501995   Reference number：01A0486799

Electrical Properties and Thermal Stability of Cu/6H-SiC Junctions.

Cu/6H-SiC接合の電気特性と熱安定性

Author (5)： SUEZAKI T (Nara Inst. Sci. and Technol., Nara, JPN) ,  KAWAHITO K (Nara Inst. Sci. and Technol., Nara, JPN) ,  HATAYAMA T (Nara Inst. Sci. and Technol., Nara, JPN) ,  URAOKA Y (Nara Inst. Sci. and Technol., Nara, JPN) ,  FUYUKI T (Nara Inst. Sci. and Technol., Nara, JPN)
Material： Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)
Volume： 40  Issue： 1A/B  Page： L43-L45  Publication year： Jan. 15, 2001 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *Copper ,...

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JST classification (2)： Semiconductor-metal contacts  (BM03084G) ,  Diodes  (NC03050R)

Reference (8)：

• 1) W. Choyke, H. Matsunami and G. Pensl: <I>Silicon Carbide</I> (John Wiley & Sons, New York, 1997).
• 2) C. H. Carter, Jr., V. F. Tsvetkov, R. C. Glass, D. Henshall, M. Brady, St. G. Müller, O. Kordina, K. Irvine, J. A. Edmond, H.-S. Kong, R. Singh, S. T. Allen and J. W. Palmour: Mater. Sci. & Eng. B <B>61-61</B> (1999) 1.
• 3) H. Matsunami and T. Kimoto: Mater. Sci. & Eng. R <B>20</B> (1997) 125.
• 4) A. Itoh, T. Kimoto and H. Matsunami: IEEE Electron Device Lett. 16 (1995) 280.
• 5) A. Itoh and H. Matsunami: Phys. Status Solidi (a) 162 (1997) 389.

Terms in the title (4)： Cu ,  6H-SiC ,  電気特性 ,  熱安定性