Art

J-GLOBAL ID：200902196984801169   Reference number：00A0779664

Irradiation temperature dependence of production efficiency of defects induced in neutron-irradiated silicon carbides.

中性子を照射した炭化けい素において生成じた欠陥の生成効率の照射温度依存性

Author (6)： OKADA M (Kyoto Univ., Osaka, JPN) ,  ATOBE K (Naruto Univ. Education, Tokushima, JPN) ,  NAKAGAWA M (Kagawa Univ., Kagawa, JPN) ,  KANAZAWA S (Kyoto Univ., Osaka, JPN) ,  KANNO I (Kyoto Univ., Osaka, JPN) ,  KIMURA I (Kyoto Univ., Osaka, JPN)
Material： Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms  (Nuclear Instruments and Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms)
Volume： 166/167  Page： 399-403  Publication year： May. 2000 
JST Material Number： H0899A  ISSN： 0168-583X  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *silicon carbide ,...

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=00A0779664&from=J-GLOBAL&jstjournalNo=H0899A") }}

JST classification (2)： Irradiational changes semiconductors  (BK16123E) ,  Lattice defects in semiconductors  (BK12040Q)

Terms in the title (4)： 中性子 ,  炭化けい素 ,  欠陥 ,  温度依存性