Art
J-GLOBAL ID:200902197198072770   Reference number:01A0486790

Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals.

周期的な溝を持つ基板上のGaNのヘテロエピタキシャル横方向被覆成長 転位密度が低いGaN単結晶を成長させる新しい方法
Author (8):
Material:
Volume: 40  Issue: 1A/B  Page: L16-L19  Publication year: Jan. 15, 2001 
JST Material Number: F0599B  ISSN: 0021-4922  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0486790&from=J-GLOBAL&jstjournalNo=F0599B") }}
JST classification (2):
JST classification
Category name(code) classified by JST.
Semiconductor thin films  ,  Lattice defects in semiconductors 
Terms in the title (6):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page