Reactive lon Etching of GaN and AlxGa1-xN Using Cl2/CH4/Ar Plasma.

BASAK D; YAMASHITA K; SUGAHARA T; FAREED Q; NAKAGAWA D; NISHINO K; SAKAI S

Art

J-GLOBAL ID：200902198547364305 Reference number：99A0497786

Reactive lon Etching of GaN and Al_xGa_1-xN Using Cl₂/CH₄/Ar Plasma.

GaNとAl_xGa_1-xNのCl₂/CH₄/Arプラズマによる反応性エッチング

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=99A0497786&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=99A0497786&from=J-GLOBAL&jstjournalNo=G0520B") }}

Author (7)： , , , , , ,
Material：
Volume： 38 Issue： 4B Page： 2646-2651 Publication year： Apr. 30, 1999
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=99A0497786&from=J-GLOBAL&jstjournalNo=G0520B") }}

Manufacturing technology of solid-state devices

Reference (14)：

ｍore...

, , , ,

Return to Previous Page