Art

J-GLOBAL ID：200902200253055198   Reference number：09A0165071

AlN/AlGaN short-period superlattice sacrificial layers in laser lift-off for vertical-type AlGaN-based deep ultraviolet light emitting diodes

垂直型AlGaN系深紫外発光ダイオード用のレーザリフトオフにおけるAlN/AlGaN短周期超格子犠牲層

Author (6)： TAKEUCHI Misaichi (Nanoscience Dev. and Support Team, RIKEN, Wako, Saitama 351-0198, JPN) ,  MAEGAWA Tomohiro (Dep. of Electronics and Applied Physics, Tokyo Inst. of Technol., Midori-ku, Yokohama 226-8503, JPN) ,  SHIMIZU Hiroshi (Dep. of Electronics and Applied Physics, Tokyo Inst. of Technol., Midori-ku, Yokohama 226-8503, JPN) ,  OOISHI Shin (Dep. of Electronics and Applied Physics, Tokyo Inst. of Technol., Midori-ku, Yokohama 226-8503, JPN) ,  OHTSUKA Takumi (Dep. of Electronics and Applied Physics, Tokyo Inst. of Technol., Midori-ku, Yokohama 226-8503, JPN) ,  AOYAGI Yoshinobu (Ritsumeikan Global Innovation Res. Organization, Ritsumeikan Univ., 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 94  Issue： 6  Page： 061117  Publication year： Feb. 09, 2009 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： aluminum nitride ,  gallium nitride ,  semiconductor material ,  *light emitting diode ,  wafer ,  superlattice ,  *layer ,  *semiconductor process
Semi thesaurus term： *sacrificial layer

JST classification (1)： Light emitting devices  (NC03082G)

Terms in the title (9)： 垂直型 ,  AlGaN ,  深紫外発光ダイオード ,  レーザ ,  リフトオフ ,  AlN ,  短周期 ,  超格子 ,  犠牲層