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J-GLOBAL ID：200902202917884890   Reference number：05A0494579

Study on Oxynitride Buffer Layers in HfO₂ Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance

金属-絶縁体-半導体電界効果トランジスターの性能を改善するためのHfO₂-金属-絶縁体-半導体構造におけるオキシナイトライドバッファー層に関する研究

Author (9)： OTA Hiroyuki (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  YASUDA Naoki (Assoc. Super-Advanced Electronics Technol., Ibaraki, JPN) ,  YASUDA Tetsuji (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MORITA Yukinori (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIYATA Noriyuki (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  TOMINAGA Koji (Assoc. Super-Advanced Electronics Technol., Ibaraki, JPN) ,  KADOSHIMA Masaru (Assoc. Super-Advanced Electronics Technol., Ibaraki, JPN) ,  MIGITA Shinji (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  NABATAME Toshihide (Assoc. Super-Advanced Electronics Technol., Ibaraki, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 44  Issue： 4A  Page： 1698-1703  Publication year： Apr. 15, 2005 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *MISFET ,...

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JST classification (3)： Metal-insulator-semiconductor structures  (BM03085X) ,  Oxide thin films  (BK14050P) ,  Transistors  (NC03070N)

Reference (11)：

• 1) The International Technology Roadmap for Semiconductors 2004 Update (Int. SEMATECH, 2004).
• 2) R. Choi, C. S. Kang, B. H. Lee, K. Onishi, R. Nieh, S. Gopalan, E. Dharmarajan and J. C. Lee: Proc. of VLSI Symp., 2001, p. 15.
• 3) C. H. Lee, H. F. Luan, W. P. Bai, S. J. Lee, T. S. Jeon, Y. Senzaki, D. Roberts and D. L. Kwong: Tech. Dig. Int. Electron Device Meet., 2000, p. 27.
• 4) K. Sekine, S. Inumiya, M. Sato, A. Kaneko, K. Eguchi and Y. Tsushima: Tech. Dig. Int. Electron Device Meet., 2003, p. 103.
• 5) D. Matsushita, K. Muraoka, Y. Nakasaki, K. Kato, S. Inumiya, K. Eguchi and M. Takayanagi: Proc. VLSI Symp., 2004, p. 172.

Terms in the title (7)： 絶縁体 ,  電界効果トランジスター ,  HfO2 ,  金属-絶縁体-半導体構造 ,  オキシナイトライド ,  バッファー層 ,  研究