Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si<sub>0.8</sub>Ge<sub>0.2</sub> heterostructures grown on Si(100) by low-temperature ultraclean LPCVD

ITO Ryota; SAKURABA Masao; MUROTA Junichi

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J-GLOBAL ID：200902204884199006 Reference number：07A0106164

Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si_0.8Ge_0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD

低温の超清浄LPCVD法によってSi(100)基板上に成長させたSi/歪-Si_0.8Ge_0.2ヘテロ構造によって構成される共鳴トンネルダイオードにおける正孔のトンネル特性

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Author (3)： , ,
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Volume： 22 Issue： 1 Page： S38-S41 Publication year： Jan. 2007
JST Material Number： E0503B ISSN： 0268-1242 CODEN： SSTEET Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Semiconductor-semiconductor contacts without Gr.13-15 element compounds , Diodes

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Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si0.8Ge0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD

Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si_0.8Ge_0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD