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J-GLOBAL ID：200901049819929243   Update date: Sep. 27, 2022

Murota Junichi

ムロタ ジュンイチ | Murota Junichi
Affiliation and department：
Tohoku University Micro System Integration Center

About Tohoku University Micro System Integration Center


Job title： Professor Emeritus
Research field  (4)： Crystal engineering ,  Applied materials ,  Thin-film surfaces and interfaces ,  Electric/electronic material engineering
Research keywords  (8)： High Strain Control ,  Nano Three Dimentional Structure ,  Atomic Control ,  Nano Hetero Structure ,  Atomic Layer Doping ,  Atomic Layer Growth ,  Chemical Vapor Deposition ,  Group IV Semiconductor
Research theme for competitive and other funds  (5)：
  • 1995 - 現在 Physics and Chemistry of Heterointerfaces
  • 1995 - 現在 Study on Fabrication of Heterostructures and Ultrasmall Semiconductor Devices
  • 1995 - 現在 Study on Ultra-Fine Pattern Fromation and Precise Control of Doping in Semiconductor
  • 1995 - 現在 Study on Control of Adsorption and Surface Reaction in Device Fabrication Process
  • 1995 - 現在 Study on Atomic Order Control of Deposition, Etching and Surface Treatment
Papers (336)：
  • J. Murota, Y. Yamamoto, I. Costina, B. Tillack, V. Le Thanh, R. Loo, M. Caymax. Atomically Controlled Processing for Dopant Segregation in CVD Si and Ge Epitaxial Growth. ECS Journal of Solid State Science and Technology. 2018. 7. 6. P305-P310
  • J. Murota, Y. Yamamoto, I. Costina, F. Bärwolf, B. Tillack, V. Le Thanh, R. Loo, B. Douhard, M. Ayyad, M. Caymax. Dopant Segregation and Diffusion in CVD Epitaxial Grown Germanium (Invited Paper). Proc. 6th Int. Workshop on Nanotechnology and Application-IWNA 2017, Phan Thiet, Vietnam, Nov. 8-11, 2017. 2017. 37-41
  • Yuji Yamamoto, Li-Wei Nien, Giovanni Capellini, Michele Virgilio, Ioan Costina, Markus Andreas Schubert, Winfried Seifert, Ashwyn Srinivasan, Roger Loo, Giordano Scappucci, et al. Photoluminescence of phosphorus atomic layer doped Ge grown on Si. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2017. 32. 10. 104005-6pp
  • Yuji Yamamoto, Peter Zaumseil, Markus Andreas Schubert, Anne Hesse, Junichi Murota, Bernd Tillack. Abrupt SiGe and Si Profile Fabrication by Introducing Carbon Delta Layer. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2017. 6. 8. P531-P534
  • J. Murota, Y. Yamamoto, I. Costina, B. Tillack, V. Le Thanh, R. Loo, M. Caymax. Atomically Controlled Processing for Ge CVD Epitaxial Growth (Invited Paper). Proc. 2016IEEE13th Int. Conf. on Solid-State and Integrated-Circuit Technol. (ICSICT 2016). 2016. S20-2
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MISC (7)：
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Patents (18)：
  • 半導体デバイス
  • 半導体デバイス
  • 電界効果トランジスタ及びその製造方法
  • SEMICONDUCTOR DEVICE HAVING A METAL-SEMICONDUCOR JUNCTION WITH A REDUCED CONTACT RESISTANCE
  • SEMICONDUCTOR DEVICE HAVING A METAL-SEMICONDUCOR JUNCTION WITH A REDUCED CONTACT RESISTANCE
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Books (19)：
  • “Integrated Nanodevice and Nanosystem Fabrication-Materials, Techniques, and New Opportunities” (Edited by S. Deleonibus)
    Pan Stanford Publishing Pte. Ltd. 2017
  • “Photonics and Electronics with Germanium” (Edited by K. Wada and L. C. Kimerling)
    Wiley-VCH Verlag GmbH & Co. Germany 2015
  • “Silicon-Germanium (SiGe) Nanostructures: Production, Properties and Applications in Electronics” (Edited by Y. Shiraki and N. Usami)
    Woodhead Publishing Ltd., Cambridge, UK 2011
  • 薄膜ハンドブック(第2版,日本学術振興会薄膜第131委員会編)
    オーム社 2008 ISBN:9784274205194
  • 新訂版・表面科学の基礎と応用
    エヌ・ティ-・エス社 2004 ISBN:4860430514
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Lectures and oral presentations  (74)：
  • Dopant Segregation and Diffusion in CVD Epitaxial Grown Germanium
    (The 6th International Workshop on Nanotechnology and Application-IWNA 2017, Phan Thiet, Vietnam, Nov. 8-11, 2017, Abs.Code. NFT-003-I. 2017)
  • Atomically Controlled Processing for In-Situ Doping in CVD Si and Ge Epitaxial Growth
    (The First International Semiconductor Conference for Gloval Challenges (ISCGC2017) Nanjing, China, July 16-19, 2017. p.30 . 2017)
  • Atomically Controlled Processing for Dopant Segregation in CVD Silicon and Germanium Epitaxial Growth
    (Int. Conf. on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT 6); Schloss Hernstein, Austria, May 21-25, 2017. 2017)
  • Dopant Segregation in Si and Ge CVD Epitaxial Growth
    (The 8th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN2016), Ha Long City, Vietnam, Nov. 8-12, 2016, No. NMD-122, pp.33-34. 2016)
  • Atomically Controlled Processing for Ge CVD Epitaxial Growth
    (2016IEEE13th Int. Conf. on Solid-State and Integrated-Circuit Technol. (ICSICT 2016), Hangzhou, China, Oct. 25-28. No.S20-2 2016)
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Education (2)：
  • - 1972 Hokkaido University Graduate School of Engineering Department of Electronic Engineering
  • - 1970 Hokkaido University Faculty of Engineering Department of Electronic Engineering
Professional career (1)：
  • 工学博士 (Hokkaido University)
Work history (4)：
  • 1995/02 - 2012/03 Tohoku University RIEC Professor
  • 1985/03 - 1995/02 Tohoku University Research Institute of Electrical Communication(RIEC) Associate Professor
  • 1983/04 - 1985/03 Atsugi ECL, NTT Researcher
  • 1972/04 - 1983/03 Musashino Electrical Communication Laboratory (ECL), Nippon Telegraph and Telephone Public Corporation (NTT) Researcher
Committee career (16)：
  • 2012/10 - 現在 The Electrochemical Society(ECS) ECS Fellow
  • 2012/10 - 現在 米国電気化学協会 フェロー
  • 2009/09 - 現在 Japan Society of Applied Physics(JSAP) JSAP Fellow
  • 2009/09 - 現在 応用物理学会 フェロー
  • 2005/05 - 現在 International Workshop on New Group IV Semiconductor Nanoelectronics Organizing committee chair, Program committee chair, etc.
Show all
Awards (5)：
  • 2012/10 - The Electrochemical Society The Electrochemical Society(ECS) Fellow For outstanding contributions to atomically controlled processing of group IV semiconductors by chemical vapor deposition for ultralarge scale integration
  • 2010/04 - the Minister of Education, Culture, Sports, Science and Technology The Commendation for Science and Technology for 2010: The Prizes for Science and Technology in Research Category Study on Atomically Controlled CVD Processing of Group IV Semiconductors for Ultralarge Scale Integration
  • 2009/07 - Jpn. Soc. Appl. Phys. 3rd (2009) Jpn. Soc. Appl. Phys. (JSAP) Fellow Development of Atomically Controlled Processing by Group IV Hetero CVD Technology
  • 2004/04 - JJAP:Japanese Journal of Applied Physics 2rd(2003) JJAP Editorial Contribution Award
  • 2003/11 - Foundation for Promortion of Material Science and Technology of Japan 3rd "Yamazaki-Teiichi Prize", Semiconductor & Semiconductor Devices Division Development of Group IV Hetero CVD Technology and Creation of Atomically Controlled Processing
Association Membership(s) (2)：
The Electrochemical Society ,  応用物理学会
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