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J-GLOBAL ID：200902209039228031   Reference number：06A0242172

Estimation of Converters with SiC Devices for Distribution Networks

配電網のためのSiCデバイスを有するコンバータの評価

Author (4)： KONDOH Junji (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  YATSUO Tsutomu (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ISHII Itaru (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ARAI Kazuo (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： 電気学会論文誌 D  (IEEJ Transactions on Industry Applications)
Volume： 126  Issue： 4  Page： 480-488  Publication year： Apr. 01, 2006 
JST Material Number： X0451A  ISSN： 0913-6339  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *power converter ,...

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JST classification (1)： Power converters  (NB08030B)

Reference (11)：

• (1) C. M. Johnson et al. : “Recent progress and current issues in SiC semiconductor devices for power applications”, IEE Proc. Circuits Devices Syst., Vol. 148, No. 2, pp. 101-108 (2001)
• (2) R. Singh, J. A. Cooper, Jr., M. R. Melloch, T. P. Chow, and J. W. Palmour: “SiC Power Schottky and PiN Diodes”, IEEE Trans. on Electron Devices, Vol. 49, No. 4, pp. 665-672 (2002)
• (3) Y. Li, J. A. Cooper, Jr., and M. A. Capano: “High-voltage (3kV) UMOSFETs in 4H-SiC”, IEEE Trans. on Electron Devices, Vol. 49, No. 6, pp. 972-975 (2002)
• (4) K. Asano, Y. Sugawara, T. Hayashi, S. Singh, J. Palmour, and D. Takayama: “5kV 4H-SiC SEJFET with low Rons of 69mΩcm²”, Proc. of 14th ISPSD, pp. 61-64 (2002)
• (5) S. Ryu et al. : “10-kV 123mW-cm² 4H-SiC Power DMOSFETs”, IEEE Electron Device Letters, Vol. 25, No. 8, p. 556 (2004)

Terms in the title (4)： 配電 ,  SiC ,  コンバータ ,  評価