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J-GLOBAL ID：200902213301196089   Reference number：05A0974661

Nondestructive Analysis of Crystal Defects in 4H-SiC Epilayer by Devised Electron-Beam-Induced Current Method

考案した電子ビーム誘起電流法による4H-SiCエピ層における結晶欠陥の非破壊解析

Author (6)： NITANI Satoshi (Nara Inst. of Sci. and Technol., Nara, JPN) ,  HATAYAMA Tomoaki (Nara Inst. of Sci. and Technol., Nara, JPN) ,  YAMAGUCHI Kenji (Mitsubishi Materials Corp., Saitama, JPN) ,  YANO Hiroshi (Nara Inst. of Sci. and Technol., Nara, JPN) ,  URAOKA Yukiharu (Nara Inst. of Sci. and Technol., Nara, JPN) ,  FUYUKI Takashi (Nara Inst. of Sci. and Technol., Nara, JPN)
Material： Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)
Volume： 44  Issue： 37-41  Page： L1271-L1274  Publication year： Oct. 10, 2005 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： silicon carbide ,...

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JST classification (1)： Experimental techniques of observation of lattice defects  (BK12020U)

Reference (12)：

• 1) W. J. Choyke, H. Matsunami and G. Pensl: Silicon Carbide: Recent Major Advances (Springer, Berlin, 2003) p. 137.
• 2) H. Lendemann, F. Dahlquist, N. Johansson, R. Söderholm, P. A. Nilsspn, J. P. Bergman and P. Skytt: Mater. Sci. Forum 353–356 (2001) 727.
• 3) T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Senzaki and K. Arai: J. Cryst. Growth 271 (2004) 1.
• 4) M. Tajima, E. Higasa, T. Hayashi, H. Kinoshita and H. Shiomi: Appl. Phys. Lett. 86 (2005) 061914.
• 5) H. Fujiwara, T. Kimoto, T. Toji and H. Matsunami: Mater. Sci. Forum 483–485 (2005) 151.

Terms in the title (7)： 考案 ,  電子ビーム ,  誘起 ,  4H-SiC ,  エピ層 ,  結晶欠陥 ,  破壊解析