Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(000<span style=text-decoration:overline>1</span>) face

FUKUDA K; KATO M; KOJIMA K; SENZAKI J

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J-GLOBAL ID：200902215934350292 Reference number：04A0269702

Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(000<span style=text-decoration:overline>1</span>) face

4H-SiC C(000-1)面上に作製した金属-酸化物-半導体電界効果トランジスタの電気的特性に対するゲート酸化法の効果

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Author (4)： , , ,
Material：
Volume： 84 Issue： 12 Page： 2088-2090 Publication year： Mar. 22, 2004
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Transistors

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