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J-GLOBAL ID：200901094624269520
Update date: Aug. 28, 2020
Senzaki Junji
センザキ ジュンジ | Senzaki Junji
Affiliation and department：
National Institute of Advanced Industrial Science and Technology
About National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=J37358179
MISC (21)：
Junji Senzaki, Kazutoshi Kojima, Tomohisa Kato, Atsushi Shimozato, Kenji Fukuda. Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers. APPLIED PHYSICS LETTERS. 2006. 89. 2. 022909-
4H-SiC基板上に形成された熱酸化膜の高信頼化技術. 電子情報通信学会論文誌 C エレクトロニクス. 2006. J89-C. 9. 597-603
S Nakashima, T Mitani, J Senzaki, H Okumura, T Yamamoto. Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals. JOURNAL OF APPLIED PHYSICS. 2005. 97. 12. 123507-1-123507-8
J Senzaki, K Kojima, K Fukuda. Effects of n-type 4H-SiC epitaxial wafer quality on reliability of thermal oxides. APPLIED PHYSICS LETTERS. 2004. 85. 25. 6182-6184
K Fukuda, M Kato, K Kojima, J Senzaki. Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(000(1)over-bar) face. APPLIED PHYSICS LETTERS. 2004. 84. 12. 2088-2090
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