Dynamically stable gallium-induced 3×3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy

JEGANATHAN K; SHIMIZU M; OKUMURA H

Art

J-GLOBAL ID：200902219414433514 Reference number：04A0304677

Dynamically stable gallium-induced 3×3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy

分子線エピタクシーによる二次元GaN核形成のための動的に安定なガリウム誘起3×3-SiC(0001)面

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=04A0304677&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0304677&from=J-GLOBAL&jstjournalNo=C0266A") }}

Author (3)： , ,
Material：
Volume： 95 Issue： 7 Page： 3761-3764 Publication year： Apr. 01, 2004
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0304677&from=J-GLOBAL&jstjournalNo=C0266A") }}

Semiconductor thin films

, , , , ,

Return to Previous Page