Rchr
J-GLOBAL ID：200901078052563779
Update date: Aug. 28, 2020
Shimizu Mitsuaki
シミズ ミツアキ | Shimizu Mitsuaki
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=M46001599
Research field (1)：
Metallic materials
Research theme for competitive and other funds (1)：
窒化物半導体を用いた電子デバイスの開発
MISC (34)：
T Kitamura, XQ Shen, M Sugiyama, H Nakanishi, M Shimizu, H Okumura. Generation of cubic phase in molecular-beam-epitaxy-grown hexagonal InGaN epilayers on InN. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2006. 45. 1A. 57-60
XQ Shen, M Shimizu, T Yamamoto, Y Honda, H Okumura. Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001) substrates by RF-MBE. JOURNAL OF CRYSTAL GROWTH. 2005. 278. 1-4. 378-382
A Kojima, M Shimizu, CK Hyon, T Kamimura, M Maeda, K Matsumoto. Air stable n-type top gate carbon nanotube filed effect transistors with silicon nitride insulator deposited by thermal chemical vapor deposition. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 2005. 44. 8-11. L328-L330
K Jeganathan, M Shimizu, H Okumura. Dynamically stable gallium-induced 3x3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy. JOURNAL OF APPLIED PHYSICS. 2004. 95. 7. 3761-3764
GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS. 2004. 43. 12A. L1537-L1539
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