Art

J-GLOBAL ID：200902230519036620   Reference number：08A0361068

Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

低圧バイアス増強の核形成および成長による平滑な超ナノ結晶性ダイヤモンド薄膜の合成および特性評価

Author (11)： CHEN Y. C. (Dep. of Materials Sci. and Engineering, National Tsing-Hua Univ., Hsin-Chu 300, Taiwan) ,  ZHONG X. Y. (Center for Electron Microscopy, Argonne National Lab., Argonne, Illinois 60439, USA) ,  KONICEK A. R. (Dep. of Physics, Univ. of Wisconsin-Madison, Madison, Wisconsin 53706, USA) ,  GRIERSON D. S. (Dep. of Engineering Physics, Univ. of Wisconsin-Madison, Madison, Wisconsin 53706, USA) ,  TAI N. H. (Dep. of Materials Sci. and Engineering, National Tsing-Hua Univ., Hsin-Chu 300, Taiwan) ,  LIN I. N. (Dep. of Physics, Tamkang Univ., Tamsui 251, Taiwan) ,  KABIUS B. (Center for Electron Microscopy, Argonne National Lab., Argonne, Illinois 60439, USA) ,  HILLER J. M. (Center for Electron Microscopy, Argonne National Lab., Argonne, Illinois 60439, USA) ,  SUMANT A. V. (Center for Nanoscale Materials, Argonne National Lab., Argonne, Illinois 60439, USA) ,  CARPICK R. W. (Dep. of Mechanical Engineering and Applied Mechanics, Univ. of Pennsylvania, Philadelphia, Pennsylvania 19104, USA) ,  AUCIELLO O. (Materials Sci. Div., Argonne National Lab., Argonne, Illinois 60439, USA)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 92  Issue： 13  Page： 133113  Publication year： Mar. 31, 2008 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *Diamond ,  *nano crystal ,  *bias ,  semiconductor thin film ,  *flatness (property) ,  growth rate ,  XANES ,  *plasma CVD ,  *ore ,  *precious stone

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (8)： 低圧 ,  バイアス ,  増強 ,  核形成 ,  成長 ,  超ナノ結晶 ,  ダイヤモンド薄膜 ,  特性評価