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J-GLOBAL ID:200902238738297251   Reference number:03A0637713

Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy

プラズマ支援分子線エピタキシーによって成長したAlN/GaNヘテロ構造中の分極電荷により誘起された2次元電子ガス
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Volume: 94  Issue:Page: 3260-3263  Publication year: Sep. 01, 2003 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor-semiconductor contacts with Gr.13-15 element compounds 

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