Art
J-GLOBAL ID：200902240758173405
Reference number：03A0256408
Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source.
ドープ酸化物源を用いた予備堆積後のドライブイン拡散中の酸化物/Si界面におけるSbの集積
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Author (4)：
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Material：
Volume：
42
Issue：
3
Page：
1139-1144
Publication year：
Mar. 15, 2003
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors
Reference (11)：
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1) K. Shibahara, M. Mifuji, T. Kugimiya, H. Tsuno, S. Yokoyama, M. Nagata, S. Miyazaki and M. Hirose: Tech. Dig. IEDM, 1996, p. 579.
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2) K. Shibahara, K. Egusa, K. Kamesaki and H. Furumoto: Jpn. J. Appl. Phys. 39 (2000) 2194.
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3) G. A. Sai-Halasz, K. T. Short and J. S. Williams: IEEE Electron Device Lett. 6 (1985) 287.
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4) K. Shibahara, H. Furumoto, K. Egusa, M. Koh and S. Yokoyama: Mater. Res. Soc. Symp. Proc. 532 (1998) 23.
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5) A. S. Grove, O. Leistiko and C. T. Sah: J. Appl. Phys. 35 (1964) 2695.
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