Art

J-GLOBAL ID：200902241459709036   Reference number：06A1031076

Downsizing of HfO₂ Layer for Pt/(Y,Yb)MnO₃/HfO₂/Si Structure

Pt/(Y,Tb)MnO₃/HfO₂/Si構造用HfO₂層の小型化

Author (4)： SUZUKI Kazuyuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  NISHIZAWA Kaori (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  MIKI Takeshi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  KATO Kazumi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 45  Issue： 9B  Page： 7332-7335  Publication year： Sep. 30, 2006 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *ferroelectrics ,...
Semi thesaurus term： chemical solution method

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JST classification (3)： Ferroelectrics,antiferroelectrics and ferroelasticity  (BM05030B) ,  Metal-insulator-semiconductor structures  (BM03085X) ,  Oxide thin films  (BK14050P)

Reference (20)：

• J. L. Moll and Y. Tarui: IEEE Trans. Electron Devices 10(1963)338.
• G. A. Smolenskii and V. A. Bokov: J. Appl. Phys.35(1964)915.
• H. N. Lee, Y. T. Kim and S. H. Choh: Appl. Phys. Lett.76(2000)1066.
• N. Fujimura, T. Ishida, T. Yoshimura and T. Ito: Appl. Phys. Lett.69(1996)1011.
• D. Ito, N. Fujimura, K. Kakuno and T. Ito: Ferroelectrics 271(2002)87.

Terms in the title (4)： PT ,  Tb ,  HfO2 ,  Si