Art

J-GLOBAL ID：200902242149924065   Reference number：05A0013140

Ultrathin Channel Vertical DG MOSFET Fabricated by Using Ion-Bombardment-Retarded Etching

イオン衝撃遅延エッチングの使用により作製した超薄縦型DG MOSFET

Author (9)： MASAHARA M (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  LIU Y (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  HOSOKAWA S (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MATSUKAWA T (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ISHII K (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  TANOUE H (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  SAKAMOTO K (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  SEKIGAWA T (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  YAMAUCHI H (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)
Volume： 51  Issue： 12  Page： 2078-2085  Publication year： Dec. 2004 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,...

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JST classification (2)： Transistors  (NC03070N) ,  Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (7)： イオン衝撃 ,  遅延 ,  エッチング ,  作製 ,  縦型 ,  dG ,  MOSFET