Rchr

J-GLOBAL ID：200901010203182329 Update date: May. 08, 2020

Sekigawa Toshihiro

セキガワトシヒロ | Sekigawa Toshihiro

Affiliation and department：
Homepage URL (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T17022314
MISC (8)：

Flex Power FPGAの回路レベルからチップレベルまでの一貫したシミュレーション評価. 電子情報通信学会和文誌D. 2006. J86-D. 6. 1071-0181
M Masahara, YX Liu, K Sakamoto, K Endo, T Matsukawa, K Ishii, T Sekigawa, H Yamauchi, H Tanoue, S Kanemaru, et al. Demonstration, analysis, and device design considerations for independent DG MOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2005. 52. 9. 2046-2053
Device design consideration for Vth-controllable 4-terminal DG-MOSFET. JAPANESE JOURNAL OF APPLIED PHYSICS. 2005. 44. 4B. 2351-2356
T Kawanami, M Hioki, H Nagase, T Tsutsumi, T Nakagawa, T Sekigawa, HP Koike. Preliminary evaluation of flex power FPGA: A power reconfigurable architecture with fine granularity. IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS. 2004. E87D. 8. 2004-2010
YX Liu, M Masahara, K Ishii, T Sekigawa, H Takashima, H Yamauchi, E Suzuki. A highly threshold voltage-controllable 4T FinFET with an 8.5-nm-thick Si-Fin channel. IEEE ELECTRON DEVICE LETTERS. 2004. 25. 7. 510-512

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