Measurement of Si, SiF, and SiF2 radicals and SiF4 molecule using very high frequency capacitively coupled plasma employing SiF4

OHTA T; HARA K; ISHIDA T; HORI M; GOTO T; ITO M; KAWAKAMI S; ISHII N

Art

J-GLOBAL ID：200902242876630929 Reference number：03A0549715

Measurement of Si, SiF, and SiF₂ radicals and SiF₄ molecule using very high frequency capacitively coupled plasma employing SiF₄

SiF₄を用いた高周波容量結合プラズマによるSi,SiF及びSiF₂ラジカルとSiF₄分子の測定

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Author (8)： , , , , , , ,
Material：
Volume： 94 Issue： 3 Page： 1428-1435 Publication year： Aug. 01, 2003
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Plasma diagnostics

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