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J-GLOBAL ID：200902245052075380   Reference number：06A0474975

Electrical resistivity of polycrystalline Cu interconnects with nano-scale linewidth

ナノスケール線幅の多結晶Cu相互接続の電気抵抗率

Author (5)： SHIMADA Masahiro (Dep. of Materials Sci. and Engineering, Kyoto Univ., Kyoto 606-8501, JPN) ,  MORIYAMA Miki (Optoelectronics Div., Toyoda Gosei Co., Ltd., Nakashima, Aichi 490-1312, JPN) ,  ITO Kazuhiro (Dep. of Materials Sci. and Engineering, Kyoto Univ., Kyoto 606-8501, JPN) ,  TSUKIMOTO Susumu (Dep. of Materials Sci. and Engineering, Kyoto Univ., Kyoto 606-8501, JPN) ,  MURAKAMI Masanori (Dep. of Materials Sci. and Engineering, Kyoto Univ., Kyoto 606-8501, JPN)
Material： Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)
Volume： 24  Issue： 1  Page： 190-194  Publication year： Jan. 2006 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *Copper ,...

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JST classification (3)： Manufacturing technology of solid-state devices  (NC03030V) ,  Metallic thin films  (BK14030T) ,  Electronic conduction in crystalline metals  (BM03033M)

Terms in the title (6)： ナノスケール ,  線幅 ,  多結晶 ,  Cu ,  相互接続 ,  電気抵抗率