Single-Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel

MATSUMOTO K; KINOSHITA S; KURACHI K; KAMIMURA T; MAEDA M; SAKAMOTO K; KUWAHARA M; ATODA N; AWANO Y

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J-GLOBAL ID：200902247432297427 Reference number：03A0393134

Single-Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel

チャンネルとして位置制御成長カーボンナノチューブを用いた5000Kの超高Coulombエネルギーをもつ単電子トランジスタ

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Material：
Volume： 42 Issue： 4B Page： 2415-2418 Publication year： Apr. 30, 2003
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Reference (10)：

1) K. Matsumoto, M. Ishi, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Harris: Appl. Phys. Lett. 68 (1996) 34.
2) Y. Gotoh, K. Matsumoto and T. Maeda: Jpn. J. Appl. Phys. 41 (2002) 2578.
3) Y. Takahashi, H. Namatsu, K. Kurihara, K. Iwadate, M. Nagase and K. Murase: IEEE Electron Device Lett. 43 (1997) 1213.
4) S. J. Tans, M. H. Devoret, H. Dai, A. Thess, R. E. Smalley, L. J. Geerligs and C. Dekker: Nature 386 (1997) 474.
5) S. J. Tans, A. R. M. Verschueren and C. Dekker: Nature 393 (1998) 49.

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