Art

J-GLOBAL ID：200902247878246249   Reference number：09A1237465

Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO₂ gate insulator

HfO₂ゲート絶縁体を用いた常時オフモードGaNおよびAlGaN/GaN MOSFETの製造

Author (8)： SUGIURA S. (Dep. of Quantum Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603, JPN) ,  HAYASHI Y. (Dep. of Quantum Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603, JPN) ,  KISHIMOTO S. (Dep. of Quantum Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603, JPN) ,  KISHIMOTO S. (Venture Business Lab., Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603, JPN) ,  MIZUTANI T. (Dep. of Quantum Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603, JPN) ,  KURODA M. (Semiconductor Device Res. Center Semiconductor Co. Panasonic Corp., 1 Kotari-Yakemachi, Nagaokakyou 617-8520, JPN) ,  UEDA T. (Semiconductor Device Res. Center Semiconductor Co. Panasonic Corp., 1 Kotari-Yakemachi, Nagaokakyou 617-8520, JPN) ,  TANAKA T. (Semiconductor Device Res. Center Semiconductor Co. Panasonic Corp., 1 Kotari-Yakemachi, Nagaokakyou 617-8520, JPN)
Material： Solid-State Electronics  (Solid-State Electron)
Volume： 54  Issue： 1  Page： 79-83  Publication year： Jan. 2010 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： hafnium oxide ,  aluminum compound ,  gallium compound ,  nitride ,  semiconductor material ,  gallium nitride ,  *MOSFET ,  gate(semiconductor) ,  device structure ,  mutual conductance ,  *switching transistor ,  current-voltage characteristic ,  band structure

JST classification (1)： Transistors  (NC03070N)

Terms in the title (5)： HfO2 ,  ゲート絶縁体 ,  GaN ,  AlGaN ,  MOSFET