Growth and structure evaluation of strain-relaxed Ge<sub>1-x</sub>Sn<sub>x</sub> buffer layers grown on various types of substrates

TAKEUCHI Shotaro; SAKAI Akira; YAMAMOTO Koji; NAKATSUKA Osamu; OGAWA Masaki; ZAIMA Shigeaki

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J-GLOBAL ID：200902250792593923 Reference number：07A0106209

Growth and structure evaluation of strain-relaxed Ge_1-xSn_x buffer layers grown on various types of substrates

いろいろな型の基板上に成長させた歪緩和したGe_1-xSi_xバッファ層の成長と構造の評価

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Author (6)： , , , , ,
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Volume： 22 Issue： 1 Page： S231-S235 Publication year： Jan. 2007
JST Material Number： E0503B ISSN： 0268-1242 CODEN： SSTEET Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Semiconductor thin films

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Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on various types of substrates

Growth and structure evaluation of strain-relaxed Ge_1-xSn_x buffer layers grown on various types of substrates