Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

HASEGAWA H; INAGAKI T; OOTOMO S; HASHIZUME T

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J-GLOBAL ID：200902255882969916 Reference number：03A0612155

Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

AlGaN/GaNヘテロ構造FETにおける電流崩壊及びゲート漏洩電流の機構

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Volume： 21 Issue： 4 Page： 1844-1855 Publication year： Jul. 2003
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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