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J-GLOBAL ID:200902257123822202   Reference number:04A0858903

Extremely high electron mobility of pseudomorphic In0.74Ga0.26As/In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

分子ビームエピタクシーによって(411)A-InP基板上に成長させた仮像In0.74Ga0.26As/In0.46Al0.54As変調ドープ量子井戸の非常に大きな電子移動度
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Volume: 85  Issue: 18  Page: 4043-4045  Publication year: Nov. 01, 2004 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor-semiconductor contacts with Gr.13-15 element compounds  ,  Electric conduction in semiconductors and insulators in general 

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