Art

J-GLOBAL ID：200902266738735376   Reference number：08A0575009

Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam

単一エネルギー陽電子ビームにより調べたErドープGaN中の空格子点型欠陥

Author (10)： UEDONO A. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki, 305-8573, JPN) ,  SHAOQIANG C. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki, 305-8573, JPN) ,  JONGWON S. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki, 305-8573, JPN) ,  ITO K. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki, 305-8573, JPN) ,  NAKAMORI H. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki, 305-8573, JPN) ,  HONDA N. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki, 305-8573, JPN) ,  TOMITA S. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki, 305-8573, JPN) ,  AKIMOTO K. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki, 305-8573, JPN) ,  KUDO H. (Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki, 305-8573, JPN) ,  ISHIBASHI S. (Res. Inst. for Computational Sciences, National Inst. of Advanced Industrial Sci. and Technol., Tsukuba, Ibaraki ...)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 103  Issue： 10  Page： 104505  Publication year： May. 15, 2008 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *gallium nitride ,  Erbium ,  MBE growth ,  *positron annihilation ,  *vacancy ,  *photoluminescence ,  radiant intensity ,  defect density ,  concentration dependence ,  compound semiconductor ,  emission intensity

JST classification (2)： Lattice defects in semiconductors  (BK12040Q) ,  Luminescence of semiconductors  (BM08092S)

Terms in the title (7)： エネルギー ,  陽電子ビーム ,  Er ,  ドープ ,  GaN ,  空格子点 ,  欠陥