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J-GLOBAL ID：200902267155474058   Reference number：06A0693634

Low-Threshold-Voltage HfO_xN p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode

部分的にシリカで覆われた白金のゲート電極を持つしきい電圧の低いHfO_xN誘電体型pチャンネル金属-酸化物-半導体電界効果トランジスタ

Author (11)： KADOSHIMA Masaru (Assoc. of Super-Advanced Electronics Technol. (ASET), Ibaraki, JPN) ,  NABATAME Toshihide (Assoc. of Super-Advanced Electronics Technol. (ASET), Ibaraki, JPN) ,  IWAMOTO Kunihiko (Assoc. of Super-Advanced Electronics Technol. (ASET), Ibaraki, JPN) ,  MISE Nobuyuki (Assoc. of Super-Advanced Electronics Technol. (ASET), Ibaraki, JPN) ,  OTA Hiroyuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  OGAWA Arito (Assoc. of Super-Advanced Electronics Technol. (ASET), Ibaraki, JPN) ,  TAKAHASHI Masashi (Assoc. of Super-Advanced Electronics Technol. (ASET), Ibaraki, JPN) ,  IKEDA Minoru (Assoc. of Super-Advanced Electronics Technol. (ASET), Ibaraki, JPN) ,  SATAKE Hideki (Assoc. of Super-Advanced Electronics Technol. (ASET), Ibaraki, JPN) ,  TORIUMI Akira (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  TORIUMI Akira (Univ. Tokyo, Tokyo, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 45  Issue： 8A  Page： 6225-6230  Publication year： Aug. 15, 2006 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： overlayer ,...
Semi thesaurus term： silica ,...

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JST classification (2)： Metal-insulator-semiconductor structures  (BM03085X) ,  Transistors  (NC03070N)

Reference (24)：

• International Technology Roadmap for Semiconductors (2004 Update), Semiconductor Industry Association, 2004.
• S. Pidin, Y. Morisaki, Y. Sugita, T. Aoyama, K. Irino, T. Nakamura and T. Sugii: Dig. Symp. VLSI Technology, 2002, p. 28.
• C. W. Yang, Y. K. Fang, C. H. Chen, S. F. Chen, C. Y. Lin, C. S. Lin, W. F. Wang, Y. M. Lin, T. H. Hou, C. H. Chen, L. G. Yao, S. C.Chen and M. S. Liang: Appl. Phys. Lett.83(2003)308.
• C. Hobbs, L. Fonseca, A. Knizhnik, V. Dhandapani, S. Samavedam, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hegde, D. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, S. Anderson, B. White and P. Tobin: IEEE Trans. Electron Devices 51(2004)978.
• T. Sasaki, F. Ootsuka, T. Hoshi, T. Kawahara, T. Maeda, M. Yasuhira and T. Arikado: Ext. Abstr. Int. Workshop Gate Insulator, 2003, p. 20.

Terms in the title (8)： シリカ ,  白金 ,  ゲート電極 ,  しきい電圧 ,  誘電体 ,  チャンネル ,  酸化物 ,  電界効果トランジスタ