Art

J-GLOBAL ID：200902267163020937   Reference number：06A0256615

HfC field emitter array controlled by built-in poly-Si thin film transistor

組込みポリSi薄膜トランジスタにより制御されたHfC電界放出アレイ

Author (6)： NAGAO M. (National Inst. of Advanced Industrial Sci. and Technol., AIST Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, JPN) ,  YASUMURO C. (National Inst. of Advanced Industrial Sci. and Technol., AIST Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, JPN) ,  SACHO Y. (National Inst. of Advanced Industrial Sci. and Technol., AIST Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, JPN) ,  TANOUE H. (National Inst. of Advanced Industrial Sci. and Technol., AIST Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, JPN) ,  KANEMARU S. (National Inst. of Advanced Industrial Sci. and Technol., AIST Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, JPN) ,  ITOH J. (National Inst. of Advanced Industrial Sci. and Technol., AIST Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, JPN)
Material： Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)
Volume： 24  Issue： 2  Page： 936-939  Publication year： Mar. 2006 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *field emission ,...

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JST classification (2)： Thermoionic emission and field emission  (BM09020S) ,  Other solid-state devices  (NC03150A)

Terms in the title (5)： 組込み ,  ポリSi ,  薄膜トランジスタ ,  HFC ,  電界放出アレイ