Low-Temperature Fabrication of Ultrathin ZrO<sub>2</sub>/Si Structure Using Metal Deposition Followed by Oxygen Annealing

NAGASATO Y; AYA T; IWAZAKI Y; HASUMI M; UENO T; KUROIWA K

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J-GLOBAL ID：200902267548802162 Reference number：05A0298237

Low-Temperature Fabrication of Ultrathin ZrO₂/Si Structure Using Metal Deposition Followed by Oxygen Annealing

金属の蒸着とその後の酸素アニーリングによる超薄ZrO₂/Si構造の低温作製

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Material：
Volume： 44 Issue： 1A Page： 5-7 Publication year： Jan. 15, 2005
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Oxide thin films

Reference (5)：

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2) M.-H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, S. W. Nahm, D.-H. Ko, J. H. Lee, N. I. Lee and K. Fujihara: Appl. Phys. Lett. 81 (2002) 472.
3) Y. Nagasato and T. Ueno: submitted to Jpn. J. Appl. Phys.
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5) L. Manchanda et al.: Int. Electron Device Meet. (2000) p. 23.

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Low-Temperature Fabrication of Ultrathin ZrO2/Si Structure Using Metal Deposition Followed by Oxygen Annealing

Low-Temperature Fabrication of Ultrathin ZrO₂/Si Structure Using Metal Deposition Followed by Oxygen Annealing