Investigation of antiphase domain annihilation mechanism in 3C-SiC on Si substrates

ISHIDA Y; TAKAHASHI T; OKUMURA H; YOSHIDA S

Art

J-GLOBAL ID：200902270508974328 Reference number：03A0698015

Investigation of antiphase domain annihilation mechanism in 3C-SiC on Si substrates

Si基板上の3C-SiC中の逆位相ドメインの消滅機構

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=03A0698015&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0698015&from=J-GLOBAL&jstjournalNo=C0266A") }}

Author (4)： , , ,
Material：
Volume： 94 Issue： 7 Page： 4676-4689 Publication year： Oct. 01, 2003
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0698015&from=J-GLOBAL&jstjournalNo=C0266A") }}

Lattice defects in semiconductors , Semiconductor thin films

, , ,

Return to Previous Page