Rchr
J-GLOBAL ID：200901071315477975
Update date: May. 01, 2020
Takahashi Tetsuo
タカハシ テツオ | Takahashi Tetsuo
Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T24069881
MISC (18)：
4H-SiC Carbon-Face Epiaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition. Materials Science Forum. 2004. 457-460. 209-212
Y Ishida, T Takahashi, H Okumura, S Yoshida. Investigation of antiphase domain annihilation mechanism in 3C-SiC on Si substrates. JOURNAL OF APPLIED PHYSICS. 2003. 94. 7. 4676-4689
J Nishio, M Hasegawa, K Kojima, T Ohno, Y Ishida, T Takahashi, T Suzuki, T Tanaka, K Arai. Uniformity of 4H-SiC epitaxial layers grown on 3-in diameter substrates. JOURNAL OF CRYSTAL GROWTH. 2003. 258. 1-2. 113-122
KK Lee, Y Ishida, T Ohshima, K Kojima, Y Tanaka, T Takahashi, H Okumura, K Arai, T Kamiya. N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films. IEEE ELECTRON DEVICE LETTERS. 2003. 24. 7. 466-468
T Ohshima, KK Lee, Y Ishida, K Kojima, Y Tanaka, T Takahashi, M Yoshikawa, H Okumura, K Arai, T Kamiya. The electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS. 2003. 42. 6B. L625-L627
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