Art
J-GLOBAL ID:200902270627433521   Reference number:05A0605984

Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor

ヘキサメチルジシロキサンと水蒸気を用いたプラズマ支援化学気相蒸着法によって堆積した低誘電率SiOCH薄膜
Author (6):
Material:
Volume: 44  Issue: 6A  Page: 3879-3884  Publication year: Jun. 15, 2005 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Thesaurus term/Semi thesaurus term
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JST classification (2):
JST classification
Category name(code) classified by JST.
Techniques and equipment of thin film deposition  ,  Semiconductor thin films 
Reference (17):
  • International Technology Roadmap for Semiconductors
  • LOBOTA, M. J. Electrochemical Society Meet. Abstr., Montreal, Quebec, Canada, May 4-9, 1997. 1997, 97-1, 454
  • SHIOYA, Y. 2000 Proc. VLSI Multilevel Interconnection Technology Conf. (VMIC). 2000, 143
  • SHIOYA, Y. J. Electrochem. Soc. 2003, 150, F1
  • WANG, Y. H. J. Electrochem. Soc. 2004, 151, F73
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