Art
J-GLOBAL ID：200902273336988541   Reference number：04A0709956

Boron carbon nitride film with low dielectric constant as passivation film for high speed electronic devices

高速電子デバイス用低誘電率窒化ほう素炭素
Author (4)：
UMEDA S

About UMEDA S

(Osaka Univ., Osaka, JPN)

About Osaka Univ., Osaka, JPN

, 
YUKI T

About YUKI T

(Osaka Univ., Osaka, JPN)

About Osaka Univ., Osaka, JPN

, 
SUGIYAMA T

About SUGIYAMA T

(Osaka Univ., Osaka, JPN)

About Osaka Univ., Osaka, JPN

, 
SUGINO T

About SUGINO T

(Osaka Univ., Osaka, JPN)

About Osaka Univ., Osaka, JPN


Material：
Diamond and Related Materials  (Diam Relat Mater)

About Diamond and Related Materials


Volume： 13  Issue： 4/8  Page： 1135-1138  Publication year： Apr. 2004 
JST Material Number： W0498A  ISSN： 0925-9635  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
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plasma CVD

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,...
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JST classification (1)：
JST classification
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Materials of solid-state devices 
(NC03020K)

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Terms in the title (3)：
Terms in the title
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電子デバイス

About 電子デバイス

, 
低誘電率

About 低誘電率

, 
窒化ほう素炭素

About 窒化ほう素炭素


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