Strain relaxation correlated with the transport properties of AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy.

JEGANATHAN K; IDE T; SHIMIZU M; OKUMURA H

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J-GLOBAL ID：200902276644785936 Reference number：03A0143732

Strain relaxation correlated with the transport properties of AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy.

プラズマ支援分子線エピタクシーで成長させたAlN/GaNヘテロ構造の輸送特性に関連する歪緩和

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Material：
Volume： 93 Issue： 4 Page： 2047-2050 Publication year： Feb. 15, 2003
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Semiconductor-semiconductor contacts with Gr.13-15 element compounds

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