Low Power Spin-Transfer Magnetoresistive Random Access Memory Writing Scheme with Selective Word Line Bootstrap

SUGIMURA Takeaki; SAKAGUCHI Takeshi; FUKUSHIMA Takafumi; TANAKA Tetsu; KOYANAGI Mitsumasa

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J-GLOBAL ID：200902276715148380 Reference number：07A0478851

Low Power Spin-Transfer Magnetoresistive Random Access Memory Writing Scheme with Selective Word Line Bootstrap

低電力スピン輸送磁気抵抗ランダムアクセスメモリの選択ワード線ブートストラップ

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Material：
Volume： 46 Issue： 4B Page： 2226-2230 Publication year： Apr. 30, 2007
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor integrated circuit

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