Art
J-GLOBAL ID:200902276807007561   Reference number:07A0210630

Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Si(100)上の超真空化学蒸着による高品質Geエピ層の成長のための超薄低温SiGeバッファ
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Material:
Volume: 90  Issue:Page: 092108-092108-3  Publication year: Feb. 26, 2007 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

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Semiconductor thin films 

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