Art

J-GLOBAL ID：200902276807007561   Reference number：07A0210630

Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Si(100)上の超真空化学蒸着による高品質Geエピ層の成長のための超薄低温SiGeバッファ

Author (8)： LOH T. H. (Semiconductor Process Technol., Inst. of Microelectronics, Science-Park II, Singapore 117685, SGP) ,  NGUYEN H. S. (Semiconductor Process Technol., Inst. of Microelectronics, Science-Park II, Singapore 117685, SGP) ,  TUNG C. H. (Semiconductor Process Technol., Inst. of Microelectronics, Science-Park II, Singapore 117685, SGP) ,  TRIGG A. D. (Semiconductor Process Technol., Inst. of Microelectronics, Science-Park II, Singapore 117685, SGP) ,  LO G. Q. (Semiconductor Process Technol., Inst. of Microelectronics, Science-Park II, Singapore 117685, SGP) ,  BALASUBRAMANIAN N. (Semiconductor Process Technol., Inst. of Microelectronics, Science-Park II, Singapore 117685, SGP) ,  KWONG D. L. (Semiconductor Process Technol., Inst. of Microelectronics, Science-Park II, Singapore 117685, SGP) ,  TRIPATHY S. (Inst. of Materials Res. and Engineering, 3 Res. Link, Singapore 117602, SGP)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 90  Issue： 9  Page： 092108-092108-3  Publication year： Feb. 26, 2007 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： silicon ,...
Semi thesaurus term： strain relaxation

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JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (10)： Si ,  真空 ,  化学蒸着 ,  高品質 ,  Ge ,  エピ層 ,  成長 ,  低温 ,  SiGe ,  バッファ