Art

J-GLOBAL ID：200902280560122432   Reference number：09A0851356

Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates

Si(110)基板上に成長した組成的に一様および段状傾斜のSiGe膜における歪み緩和メカニズム

Author (8)： ARIMOTO Keisuke (Center for Crystal Sci. and Technol., Univ. of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, JPN) ,  WATANABE Masato (Center for Crystal Sci. and Technol., Univ. of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, JPN) ,  YAMANAKA Junji (Center for Crystal Sci. and Technol., Univ. of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, JPN) ,  NAKAGAWA Kiyokazu (Center for Crystal Sci. and Technol., Univ. of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, JPN) ,  SAWANO Kentarou (Res. Center for Silicon Nano-Science, Advanced Res. Laboratories, Tokyo City Univ., 8-15-1 Todoroki, Setagaya-ku ...) ,  SHIRAKI Yasuhiro (Res. Center for Silicon Nano-Science, Advanced Res. Laboratories, Tokyo City Univ., 8-15-1 Todoroki, Setagaya-ku ...) ,  USAMI Noritaka (Inst. for Materials Res., Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JPN) ,  NAKAJIMA Kazuo (Inst. for Materials Res., Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JPN)
Material： Solid-State Electronics  (Solid-State Electron)
Volume： 53  Issue： 10  Page： 1135-1143  Publication year： Oct. 2009 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,  *MBE growth ,  *silicon compound ,  *germanium compound ,  relaxation phenomenon ,  substrate (plate) ,  *X-Ray Diffraction ,  *scanning transmisson electron microscope ,  crystal structure ,  atomic force microscope ,  nucleation
Semi thesaurus term： strain relaxation ,  STEM

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (6)： Si ,  成長 ,  組成 ,  SiGe ,  歪み緩和 ,  メカニズム