Solid-Phase Diffusion of Carbon into GaN Using SiN<sub>x</sub>/CN<sub>x</sub>/GaN Structure

KIMURA Takeshi; OOTOMO Shinya; NOMURA Takehiko; YOSHIDA Seikoh; HASHIZUME Tamotsu

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J-GLOBAL ID：200902284824619816 Reference number：07A0351072

Solid-Phase Diffusion of Carbon into GaN Using SiN_x/CN_x/GaN Structure

SiN_x/CN_x/GaN構造を使った,GaNへの炭素の固相拡散

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Material：
Volume： 46 Issue： 8-11 Page： L224-L226 Publication year： Mar. 25, 2007
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Diffusion in solids in general , Semiconductor thin films

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Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure

Solid-Phase Diffusion of Carbon into GaN Using SiN_x/CN_x/GaN Structure