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J-GLOBAL ID：200902285408073479   Reference number：05A0173213

Evaluation of the Characters of a-SiC:H Films Deposited by RF Plasma CVD Technique

RFプラズマCVD法により堆積したSiC膜の評価

Author (5)： SASAKI ATSUSHI (室蘭工大) ,  NIWAMOTO YUJI (室蘭工大) ,  ITO HIDENORI (室蘭工大) ,  SATO KOKI (室蘭工大) ,  TAGASHIRA HIROAKI (室蘭工大)
Material： 電気学会論文誌 A  (IEEJ Transactions on Fundamentals and Materials)
Volume： 125  Issue： 2  Page： 133-137  Publication year： Feb. 01, 2005 
JST Material Number： S0808A  ISSN： 0385-4205  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *plasma ,...
Semi thesaurus term： 自己バイアス電圧

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JST classification (2)： Techniques and equipment of thin film deposition  (BK14020I) ,  Manufacturing technology of solid-state devices  (NC03030V)

Substance index (1)： Tetramethylsilane

Reference (7)：

• (1) P. G. Neudeck and C. Fazi: “High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodes”, J. Appl. Phys., Vol. 80, pp. 1219-1225 (1989)
• (2) A. Grill and V. Patel: “Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane”, J. Appl. Phys., Vol. 85, pp. 3314-3318 (1999)
• (3) H. Itoh, Y. Echigo, K. Satoh, M. Shimozuma, Y. Nakao, and H. Tagashira: “Deposition of a-SiC: H Films by using Tetramethylsilane and Hydrogen”, 15th International Symposium on Plasma Chemistry, Vol. 5, pp. 1793-1797 (2001)
• (4) Y. Niwamoto H. Itoh, K. Satoh, Y. Nakao, and H. Tagashira: “SiC films deposited by the plasma CVD method and assessment of films”, The Paper of Technical Meeting on Electrical Discharges, IEE Japan, ED-02-92, pp. 37-42 (2002) (in Japanese)
• 庭本裕司·伊藤秀範·佐藤孝紀·中尾光夫·田頭博昭:「プラズマCVD法に よりSiC膜堆積と膜評価」, 電気学会放電研資,ED-02-92, pp. 37-42 (2002)

Terms in the title (5)： RFプラズマ ,  CVD法 ,  堆積 ,  SiC ,  評価