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J-GLOBAL ID:200902287126350219   Reference number:05A0241529

最近10年の結晶成長の動き III族窒化物半導体結晶の進展

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Volume: 31  Issue:Page: 428-430  Publication year: Jan. 31, 2005 
JST Material Number: F0452B  ISSN: 0385-6275  Document type: Article
Article type: 解説  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Semiconductor thin films 
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