Art

J-GLOBAL ID：201002219276524709   Reference number：10A0374028

Nitric acid oxidation of Si method at 120 °C: HNO₃ concentration dependence

120°CにおけるSiの硝酸酸化法:HNO₃濃度依存性

Author (6)： IMAMURA Kentaro (Inst. of Scientific and Industrial Res., Osaka Univ., 8-1 Mihogaoka, Ibaraki 567-0047, JPN) ,  TAKAHASHI Masao (Inst. of Scientific and Industrial Res., Osaka Univ., 8-1 Mihogaoka, Ibaraki 567-0047, JPN) ,  ASUHA (Inst. of Scientific and Industrial Res., Osaka Univ., 8-1 Mihogaoka, Ibaraki 567-0047, JPN) ,  HIRAYAMA Yasuhiro (CREST, Japan Sci. and Technol. Agency, JPN) ,  IMAI Shigeki (CREST, Japan Sci. and Technol. Agency, JPN) ,  KOBAYASHI Hikaru (Inst. of Scientific and Industrial Res., Osaka Univ., 8-1 Mihogaoka, Ibaraki 567-0047, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 107  Issue： 5  Page： 054503  Publication year： Mar. 01, 2010 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： silicon ,  semiconductor ,  *oxidation ,  substrate (plate) ,  *silicon dioxide ,  *dielectric thin film ,  Nitric Acid ,  infrared absorption spectrum ,  *leakage current ,  concentration dependence ,  *nitric acid oxidation ,  FT-IR spectrum ,  barrier height

JST classification (1)： Other contacts of semiconductors  (BM03086O)

Terms in the title (4)： Si ,  硝酸酸化法 ,  HNO3 ,  濃度依存性