Art

J-GLOBAL ID：201002220892062598   Reference number：10A0213412

Properties of nitrogen diluted hydrogenated amorphous carbon (n-type a-C:H) films and their realization in n-type a-C:H/p-type crystalline silicon heterojunction diodes

窒素希釈水素化非晶質炭素(n型a-C:H)薄膜の特性とn型a-C:H/p型結晶シリコンヘテロ接合ダイオードの実現

Author (4)： KUMAR Sushil (Plasma Processed Materials Group, National Physical Lab. (CSIR), Dr. K.S. Krishnan Road, New Delhi 110 012, IND) ,  DWIVEDI Neeraj (Plasma Processed Materials Group, National Physical Lab. (CSIR), Dr. K.S. Krishnan Road, New Delhi 110 012, IND) ,  RAUTHAN C.m.s. (Plasma Processed Materials Group, National Physical Lab. (CSIR), Dr. K.S. Krishnan Road, New Delhi 110 012, IND) ,  PANWAR O.s. (Plasma Processed Materials Group, National Physical Lab. (CSIR), Dr. K.S. Krishnan Road, New Delhi 110 012, IND)
Material： Vacuum
Volume： 84  Issue： 7  Page： 882-889  Publication year： Mar. 04, 2010 
JST Material Number： E0347A  ISSN： 0042-207X  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *carbon material ,  hydrogenation ,  *semiconductor thin film ,  substrate (plate) ,  silicon ,  heterojunction ,  *diode ,  P-type semiconductor ,  *plasma CVD ,  hardness ,  residual stress ,  optical gap ,  refractive index ,  micro structure ,  Raman spectrum ,  *N-type semiconductor ,  current-voltage characteristic ,  capacitance-voltage characteristic ,  *amorphous carbon
Semi thesaurus term： *amorphous carbon

JST classification (2)： Semiconductor-semiconductor contacts without Gr.13-15 element compounds  (BM03083P) ,  Diodes  (NC03050R)

Terms in the title (8)： 窒素 ,  希釈 ,  水素化 ,  非晶質炭素 ,  薄膜 ,  結晶シリコン ,  ヘテロ接合 ,  ダイオード