Art

J-GLOBAL ID：201002256502259471   Reference number：10A0135380

GaInAsP/InP long-wavelength lasers with strain-compensated quantum-wire active regions and SiO₂/semiconductor reflectors

歪補償量子細線活性領域およびSiO₂/半導体反射器を含むGaInAsP/InP長波長レーザ

Author (10)： YAGI Hideki (Quantum Nanoelectronics Res. Center, Tokyo Inst. of Technol.) ,  YAGI Hideki (CREST, Japan Sci. and Technol. Agency) ,  SANO Takuya (Quantum Nanoelectronics Res. Center, Tokyo Inst. of Technol.) ,  MIURA Koji (Quantum Nanoelectronics Res. Center, Tokyo Inst. of Technol.) ,  PLUMWONGROT Dhanorm (Quantum Nanoelectronics Res. Center, Tokyo Inst. of Technol.) ,  OHIRA Kazuya (Quantum Nanoelectronics Res. Center, Tokyo Inst. of Technol.) ,  MARUYAMA Takeo (Quantum Nanoelectronics Res. Center, Tokyo Inst. of Technol.) ,  MARUYAMA Takeo (CREST, Japan Sci. and Technol. Agency) ,  ARAI Shigehisa (Quantum Nanoelectronics Res. Center, Tokyo Inst. of Technol.) ,  ARAI Shigehisa (CREST, Japan Sci. and Technol. Agency)
Material： IEICE Electronics Express (Web)  (IEICE Electron Express (Web))
Volume： 1  Issue： 17  Page： 540-544 (J-STAGE)  Publication year： 2004 
JST Material Number： U0039A  ISSN： 1349-2543  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *gallium indium arsenide phosphide ,  *indium phosphide ,  infrared laser ,  compensation ,  *quantum wire ,  *active layer ,  electron beam lithography ,  *semiconductor laser ,  quantum well ,  RIE ,  MOCVD ,  reflector(electromagnetic) ,  wafer ,  current density
Semi thesaurus term： InP ,  long-wavelength laser ,  strain compensation ,  quantum-wire laser ,  organometallic vapor phase epitaxy ,  threshold current

JST classification (1)： Semiconductor lasers  (BD04070L)

Reference (8)：

• [1] N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura, and S. Arai, “GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH₄/H₂ Reactive-Ion Etching, ” Jpn. J. Appl. Phys., vol. 39, no. 6A, pp. 3410-3415, June 2000.
• [2] N. Nunoya, M. Nakamura, M. Morshed, S. Tamura, and S. Arai, “High-Performance 1.55-µm Wavelength GaInAsP-InP Distributed-Feedback Lasers with Wirelike Active Regions, ” IEEE J. Select. Topics Quantum Electron., vol. 7, no. 2, pp. 249-258, March-April 2001.
• [3] H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque, and S. Arai, “Room Temperature-Continuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method, ” Jpn. J. Appl. Phys., vol. 42, no. 7A, pp. 748-750, July 2003.
• [4] H. Yagi, T. Sano, K. Ohira, D. Plumwongrot, T. Maruyama, A. Haque, S. Tamura, and S. Arai, “GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes, ” Jpn. J. Appl. Phys., vol. 43, no. 6A, pp. 3401-3409, June 2004.
• [5] H. Yagi, K. Muranushi, N. Nunoya, T. Sano, S. Tamura, and S. Arai, “Low-damage etched/regrown interface of strain-compensated GaInAsP/InP quantum-wire laser fabricated by CH₄/H₂ dry etching and regrowth, ” Appl. Phys. Lett., vol. 81, no. 6, pp. 966-968, Aug. 2002.

Terms in the title (8)： 歪補償 ,  量子細線 ,  活性領域 ,  SiO2 ,  反射器 ,  GaInAsP ,  InP ,  長波長レーザ