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J-GLOBAL ID:201002274248962157   Reference number:10A0048866

Formation of Bare Porous Surface on 6H-SiC Substrates by Photo-Electrochemical Etching

光電気化学エッチングによる6H-SiC基板上の裸多孔質表面の形成
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Volume: 48  Issue: 12  Page: 120217.1-120217.3  Publication year: Dec. 25, 2009 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Manufacturing technology of solid-state devices 
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