Comparative Study on Gate Insulators of Polymers and SiO<sub>2</sub> in Transport Properties of p- and n-Type Organic Field-Effect Transistors

OKU Shinya; NAGASE Toshiya; NAGAMATSU Shuichi; TAKASHIMA Wataru; KANETO Keiichi

Art

J-GLOBAL ID：201002283987201058 Reference number：10A0133865

Comparative Study on Gate Insulators of Polymers and SiO₂ in Transport Properties of p- and n-Type Organic Field-Effect Transistors

p型とn型有機電界効果トランジスタの輸送特性における高分子とSiO₂ゲート絶縁体に関する比較研究

Publisher site {{ this.onShowPLink() }} Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=10A0133865&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=10A0133865&from=J-GLOBAL&jstjournalNo=G0520B") }}

Author (5)： , , , ,
Material：
Volume： 49 Issue： 1,Issue 2 Page： 01AB14.1-01AB14.4 Publication year： Jan. 25, 2010
JST Material Number： G0520B ISSN： 0021-4922 CODEN： JJAPB6 Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

, , , , , , , , , , , , , , , , , , ,
, , , , ,

Transistors , Oxide thin films , Thin films of organic compounds

Reference (24)：

ｍore...

, , , , ,

Return to Previous Page

Comparative Study on Gate Insulators of Polymers and SiO2 in Transport Properties of p- and n-Type Organic Field-Effect Transistors

Comparative Study on Gate Insulators of Polymers and SiO₂ in Transport Properties of p- and n-Type Organic Field-Effect Transistors