Kato Masashi

カトウマサシ | Kato Masashi

Affiliation and department：
Job title： Professor
Homepage URL (1)： http://ik-lab.web.nitech.ac.jp/

Research field (2)： Electric/electronic material engineering , Electronic devices and equipment

Research keywords (1)： Semiconductor physics

Research theme for competitive and other funds (4)：

Papers (116)：

Masashi Kato, Yosuke Kato. Estimation of surface recombination velocities and bulk carrier lifetime for SrTiO3 using angle-lapped structures. Chemical Physics Letters. 2022. 805. 139955-1-139955-3
Shunta Harada, Toshiki Mii, Hitoshi Sakane, Masashi Kato. Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation. Scientific Reports. 2022. 12. 1. 13542
Masashi Kato, Takuto Maeda, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi. Relationship of carbon concentration and slow decays of photoluminescence in homoepitaxial n-type GaN layers. Japanese Journal of Applied Physics. 2022. 61. 078004-1-078004-4
Masashi Kato, Jing Di, Yutaro Ohkouchi, Taisuke Mizuno, Masaya Ichimura, Kazutoshi Kojima. Hole capture cross section of the Al acceptor level in 4H-SiC. Materials Today Communications. 2022. 31. 103648-1-103648-3
Kotaro Ishiji, Masashi Kato, Ryuichi Sugie. Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography. Journal of Electronic Materials. 2022. 51. 4. 1541-1547

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MISC (8)：

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Patents (21)：

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Books (4)：

Lectures and oral presentations (241)：

ThA1-3 Single Crystal Photocatalytic Oxides: Carrier Recombination and Solar-to-hydrogen Conversion
(9th International Symposium on Control of Semiconductor Interfaces 2022)
[Th2-2] Discussion on carrier lifetime control in a drift layer of 1.2 kV class 4H-SiC devices for suppression of bipolar degradation
(19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors 2022)
22p-E106-8 局在表面プラズモン共鳴を有するTiO2におけるキャリア再結合
(第69回応用物理学会春季学術講演会 2022)
23p-E204-8 斜め研磨構造を利用したSrTiO3表面再結合速度の高精度評価
(第69回応用物理学会春季学術講演会 2022)
Effects of defects created by ion implantation on SiC devices
(第4回材料科学フロンティア研究院国際シンポジウム ~材料科学における融合研究~ 2022)

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Education (2)：

- 2000 Nagoya Institute of Technology Graduate School, Division of Engineering Electrical and Computer Engineering
- 1998 Nagoya Institute of Technology Faculty of Engineering Electrical and Computer Engineering

Professional career (2)：

Work history (5)：

2003/04/01 - 現在 Nagoya Institute of Technology Graduate School of Engineering Omohi College Associate Professor
2016/07/01 - 2021/03/31 Nagoya University Institute of Materials and Systems for Sustainability, Center for Integrated Reserch of Future Electronics
2010/08/23 - 2010/09/17 ヴィリニュス大学研究員
2009/08/18 - 2009/10/02 Vilnius University Researcher
2008/08/19 - 2008/10/02 Vilnius University Researcher

Committee career (12)：

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Awards (7)：

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Association Membership(s) (3)：

自動車技術会 , The Institute of Electronics, Information and Communication Engineers , The Japan Society of Applied Physics

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