Art
J-GLOBAL ID:201102202212826903   Reference number:11A1514628

Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors

ナノメートルスケールのリンドープ絶縁体上シリコン電界効果トランジスタに於けるドナーによる光励起電子の捕獲
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Material:
Volume: 99  Issue: 11  Page: 113108  Publication year: Sep. 12, 2011 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Transistors 

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